低电容 ESD 保护阵列### 瞬态电压抑制器,On Semiconductor
极性Polarization| 单向 Unidirectional \---|--- 反向关断电压/工作电压VRWMReverse Standoff Voltage| 3.0V 反向击穿电压VBRBreakdown Voltage| 5.6V 峰值脉冲耗散功率PPPMPeak Pulse Power Dissipation| 50W 峰值脉冲电流IPPmPeak Forward Surge Current| 4.8A 额定耗散功率PdPower dissipation| 0.24W/240mW Description & Applications| Specification Features • Dual Common Anode ESD Protection Diodes • SC−89 Package Allows Either Two Separate Unidirectional Configurations or a Single Bidirectional Configuration • ESD Rating of Class N exceeding 16 kV per the Human Body Model • Meets IEC61000−4−2 Level 4 • Low Leakage < 5.0 uA • These are Pb−Free Devices 描述与应用| 规格特性 •双共阳极ESD保护 •SC-89封装可将瞬态电导向正极或地两个独立的单向配置或单双向配置 •ESD额定值N类(超过16千伏每人体模型 •符合IEC61000-4-2第4级 •低漏<5.0 uA •这些都是无铅设备
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NZL5V6AXV3T1G | ON Semiconductor 安森美 | 下载 |