IPD640N06LGBTMA1

INFINEON  IPD640N06LGBTMA1  晶体管, MOSFET, N沟道, 18 A, 60 V, 0.047 ohm, 10 V, 1.6 V

The IPD640N06L G is a 60V N-channel Power MOSFET optimized for synchronous rectification in switched mode power supplies SMPS such as those found in servers, desktops and tablet charger. Dramatically reduced gate charge and output charge enable high system efficiency and power density. The OptiMOS™ power MOSFET is ideally suited for high frequency switching and DC-DC converters.

.

Highest system efficiency

.

Less paralleling required

.

Increased power density

.

Very low voltage overshoot

.

Superior thermal resistance