BF998E6327HTSA1

INFINEON  BF998E6327HTSA1  晶体管, MOSFET, N沟道, 30 mA, 12 V

双栅极 MOSFET 四极管

Infineon 双栅极低噪声四极管 MOSFET 射频

欧时:
Infineon Si N沟道 MOSFET 四极管 BF998E6327HTSA1, 30 mA, Vds=12 V, 4引脚 SOT-143封装

得捷:
MOSFET N-CH 12V 200MA SOT-143

贸泽:
RF MOSFET Transistors N-CH 12 V 30 mA

艾睿:
Ideal for radio frequency environments this BF998E6327HTSA1 RF amplifier from Infineon Technologies is perfect for amplifying and switching electronic signals. Its maximum power dissipation is 200 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This RF power MOSFET has an operating temperature range of -55 °C to 150 °C. Its maximum frequency is 1000 MHz. This N channel RF power MOSFET operates in depletion mode.

安富利:
Trans MOSFET N-CH 12V 0.03A 4-Pin SOT-143 T/R

Chip1Stop:
Trans RF MOSFET N-CH 12V 0.03A Automotive 4-Pin3+Tab SOT-143 T/R

Verical:
Trans RF MOSFET N-CH 12V 0.03A Automotive 4-Pin3+Tab SOT-143 T/R

Newark:
# INFINEON  BF998E6327HTSA1  MOSFET Transistor, N Channel, 30 mA, 12 V