VSMY7850X01-GS08

VSMY7850X01-GS08概述

VISHAY  VSMY7850X01-GS08  红外发光二极管, 850NM, SMD

The is a 850nm Infrared Emitting Diode based on surface emitter technology with high radiant power and high speed. A 42mil chip provides outstanding low forward voltage and allows DC operation of the device up to 1A. It has the floor life of 1 year, MSL 2, according to J-STD-020.

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High reliability
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High radiant power
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High radiant intensity
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Low forward voltage
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AEC-Q101 qualified
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±60° Angle of half intensity
VSMY7850X01-GS08数据文档
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