SPD08N50C3ATMA1

SPD08N50C3ATMA1概述

N-CH 500V 7.6A

表面贴装型 N 通道 7.6A(Tc) 83W(Tc) PG-TO252-3-1


得捷:
MOSFET N-CH 500V 7.6A TO252-3


贸泽:
MOSFET LOW POWER_LEGACY


艾睿:
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Infineon Technologies&s; SPD08N50C3ATMA1 power MOSFET can provide a solution. Its maximum power dissipation is 83000 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This device utilizes coolmos technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.


安富利:
Trans MOSFET N-CH 500V 7.6A 3-Pin TO-252 T/R


Verical:
Trans MOSFET N-CH 500V 7.6A 3-Pin2+Tab DPAK T/R


Win Source:
MOSFET N-CH 500V 7.6A DPAK


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