SI6415DQ-T1-E3数据手册PDF_SI6415DQ-T1-E3中文资料-锐单商城

SI6415DQ-T1-E3概述

P 沟道 30 V 0.019 Ohms 表面贴装功率 Mosfet - TSSOP-8

**Features:

* **Halogen-Free Option Available

* Low-Side Switching

* Low On-Resistance: 5 Ω

* Low Threshold: 0.9 V Typ.

* Fast Switching Speed: 35 ns Typ.

* TrenchFET® Power MOSFETs: 1.5 V Rated

* ESD Protected: 2000 V

**Applications:

* Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories

* Battery Operated Systems

* Power Supply Converter Circuits

* Load/Power Switching Cell Phones, Pagers

艾睿:
Trans MOSFET P-CH 30V 6.5A 8-Pin TSSOP T/R

富昌:
单 P 沟道 30 V 0.019 Ohms 表面贴装功率 Mosfet - TSSOP-8

Newark:
# VISHAY SI6415DQ-T1-E3 MOSFET Transistor, P Channel, -6.5 A, -30 V, 30 mohm, -10 V, -1 V

SI6415DQ-T1-E3数据文档