FQU17P06TU

FQU17P06TU概述

FAIRCHILD SEMICONDUCTOR  FQU17P06TU  晶体管, MOSFET, P沟道, 12 A, -60 V, 0.11 ohm, -10 V, -4 V

The FQU17P06 is a P-channel enhancement mode power MOSFET is produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength.

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Low gate charge
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100% Avalanche tested
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Low crss typical 80pF
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±25V Gate-source voltage
FQU17P06TU数据文档
型号 品牌 下载
FQU17P06TU

Fairchild 飞兆/仙童

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FQU13N10LTU

Fairchild 飞兆/仙童

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FQU1N80TU

Fairchild 飞兆/仙童

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FQU13N06LTU_WS

Fairchild 飞兆/仙童

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FQU1N60CTU

Fairchild 飞兆/仙童

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FQU11P06TU

Fairchild 飞兆/仙童

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FQU10N20CTU

Fairchild 飞兆/仙童

下载
FQU13N06LTU

Fairchild 飞兆/仙童

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FQU12N20TU

Fairchild 飞兆/仙童

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FQU10N20LTU

Fairchild 飞兆/仙童

下载
FQU10N20TU

Fairchild 飞兆/仙童

下载

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