IXTT90P10P

IXTT90P10P概述

P沟道 100V 90A

表面贴装型 P 通道 100 V 90A(Tc) 462W(Tc) TO-268AA


得捷:
MOSFET P-CH 100V 90A TO268


立创商城:
P沟道 100V 90A


贸泽:
MOSFET -90.0 Amps -100V 0.250 Rds


艾睿:
Compared to traditional transistors, IXTT90P10P power MOSFETs, developed by Ixys Corporation, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 462000 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This P channel MOSFET transistor operates in enhancement mode.


Verical:
Trans MOSFET P-CH 100V 90A 3-Pin2+Tab TO-268


DeviceMart:
MOSFET P-CH 100V 90A TO-268


IXTT90P10P数据文档
型号 品牌 下载
IXTT90P10P

IXYS Semiconductor

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IXTT1N100

IXYS Semiconductor

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IXTT28N50Q

IXYS Semiconductor

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IXTT24N50Q

IXYS Semiconductor

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IXTT50N30

IXYS Semiconductor

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IXTT40N50L2

IXYS Semiconductor

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IXTT12N140

IXYS Semiconductor

下载
IXTT30N50L2

IXYS Semiconductor

下载
IXTT30N60L2

IXYS Semiconductor

下载
IXTT36P10

IXYS Semiconductor

下载
IXTT88N15

IXYS Semiconductor

下载

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