IPD65R660CFD

IPD65R660CFD概述

650V CFD的CoolMOS功率晶体管 650V CoolMOS CFD Power Transistor

Summary of Features:

.
650V technology with integrated fast body diode
.
Limited voltage overshoot during hard commutation
.
Significant Q g reduction compared to 600V CFD technology
.
Tighter R DSON max to R DSon typ window
.
Easy to design-in
.
Lower price compared to 600V CFD technology

Benefits:

.
Low switching losses due to low Q rr at repetitive commutation on body diode
.
Self limiting di/dt and dv/dt
.
Low Q oss
.
Reduced turn on and turn of delay times
.
Outstanding CoolMOS™ quality

Target Applications:

  

.
Telecom
.
Server
.
Solar
.
HID lamp ballast
.
LED lighting
.
eMobility
IPD65R660CFD数据文档
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