MJ10007

MJ10007概述

SOLID STATE  MJ10007  单晶体管 双极, 达林顿, NPN, 350 V, 150 W, 10 A, 30 hFE

The is a 400V NPN silicon power Darlington Transistor with base-emitter speedup diode. It is designed for high voltage, high speed power switching in inductive circuits where fall time is critical. The transistor is particularly suited for line operated switch-mode applications such as switching regulators, inverters, solenoid and relay drivers.

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8V Emitter to base voltage
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20A Peak collector current
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2.5A Base current
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1.17°C/W Thermal resistance, junction to case
MJ10007数据文档
型号 品牌 下载
MJ10007

Solid State

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MJ10000

Solid State

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MJ10009

NTE Electronics

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MJ10025

Solid State

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MJ10021

Multicomp

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MJ10005

Multicomp

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MJ10023

Solid State

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MJ10015

Solid State

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MJ1001F

Ohmite

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MJ10006

Mospec

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MJ10012

ON Semiconductor 安森美

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