N沟道逻辑电平PWM优化UltraFET沟道功率MOSFET 30V ， 50A ， 6mз N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs 30V, 50A, 6mз
General Description
This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.
Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies.
Features
• Fast switching
• rDSON = 0.0052Ω Typ, VGS = 10V
• rDSON = 0.0085Ω Typ, VGS = 4.5V
• Qg Typ = 30nC, VGS = 5V
• Qgd Typ = 11nC
• CISS Typ = 3400pF
Applications
• DC/DC converters
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