放大器晶体管NPN硅 Amplifier Transistors NPN Silicon
Implement this NPN GP BJT from to add switching and amplifying capabilities to your electronic circuit design. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 1000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| 型号 | 品牌 | 下载 |
|---|---|---|
| BC237BRL1G | ON Semiconductor 安森美 | 下载 |
| BC238ATA | Fairchild 飞兆/仙童 | 下载 |
| BC237BTAR | Fairchild 飞兆/仙童 | 下载 |
| BC237BG | ON Semiconductor 安森美 | 下载 |
| BC237_J35Z | Fairchild 飞兆/仙童 | 下载 |
| BC238_J35Z | Fairchild 飞兆/仙童 | 下载 |
| BC237CBU | Fairchild 飞兆/仙童 | 下载 |
| BC238ABU | Fairchild 飞兆/仙童 | 下载 |
| BC238CTA | Fairchild 飞兆/仙童 | 下载 |
| BC237B_J35Z | Fairchild 飞兆/仙童 | 下载 |
| BC238BTA | Fairchild 飞兆/仙童 | 下载 |