IRFIBC30GPBF

N 通道 MOSFET，600V 至 1000V，Vishay Semiconductor ### MOSFET 晶体管，Vishay Semiconductor

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

FEATURES

• Isolated Package

• High Voltage Isolation = 2.5 kVRMSt = 60 s;f = 60 Hz

• Sink to Lead Creepage Distance = 4.8 mm

• Dynamic dV/dt Rating

• Low Thermal Resistance

• Lead Pb-free Available

欧时:
### N 通道 MOSFET，600V 至 1000V，Vishay Semiconductor![http://china.rs-online.com/largeimages/L4857737-01.jpg]http://china.rs-online.com/largeimages/L4857737-01.jpg![http://china.rs-online.com/largeimages/LBIPOLAR-19.gif]http://china.rs-online.com/largeimages/LBIPOLAR-19.gif ### MOSFET 晶体管，Vishay Semiconductor

贸泽:
MOSFET N-Chan 600V 2.5 Amp

艾睿:
Trans MOSFET N-CH 600V 2.5A 3-Pin3+Tab TO-220FP

富昌:
IRFIBC30G 系列 600 V 2.5 A 2.2 Ohm N 沟道 功率 MOSFET - TO-220 FULLPAK

TME:
Transistor: N-MOSFET; unipolar; 600V; 2.5A; 35W; TO220ISO

Verical:
Trans MOSFET N-CH 600V 2.5A 3-Pin3+Tab TO-220FP

Newark:
# VISHAY  IRFIBC30GPBF  Power MOSFET, N Channel, 2.5 A, 600 V, 2.2 ohm, 10 V, 4 V