IPD22N08S2L50ATMA1

Infineon OptiMOS 系列 Si N沟道 MOSFET IPD22N08S2L50ATMA1, 27 A, Vds=75 V, 3引脚 DPAK TO-252封装

OptiMOS™ 功率 MOSFET 系列

OptiMOS™ 产品提供高性能封装，可处理最具挑战性的应用，在有限空间提供全部灵活性。 这些 Infineon 产品经的设计符合并超过计算机应用中更严格的下一代电压调节标准的能效和功率密度要求。

N 通道 - 增强模式

符合汽车 AEC Q101 规格

MSL1 高达 260°C 峰值回流焊接

175°C 工作温度

绿色封装（无铅）

超低 Rdson

得捷:
MOSFET N-CH 75V 27A TO252-3

欧时:
Infineon OptiMOS 系列 Si N沟道 MOSFET IPD22N08S2L50ATMA1, 27 A, Vds=75 V, 3引脚 DPAK TO-252封装

e络盟:
晶体管, MOSFET, N沟道, 27 A, 75 V, 0.0385 ohm, 10 V, 1.6 V

艾睿:
Looking for a component that can both amplify and switch between signals within your circuit? The IPD22N08S2L50ATMA1 power MOSFET from Infineon Technologies provides the solution. Its maximum power dissipation is 75000 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This device utilizes optimos technology. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This N channel MOSFET transistor operates in enhancement mode.

安富利:
Trans MOSFET N-CH 75V 25A 3-Pin2+Tab TO-252

Verical:
Trans MOSFET N-CH 75V 25A Automotive 3-Pin2+Tab DPAK T/R

Win Source:
MOSFET N-CH 75V 27A TO252-3