IPB50R199CPATMA1

INFINEON  IPB50R199CPATMA1  晶体管, MOSFET, N沟道, 17 A, 550 V, 0.18 ohm, 10 V, 3 V

CoolMOS™CP 功率 MOSFET

立创商城:
N沟道 550V 17A

欧时:
Infineon CoolMOS CP 系列 Si N沟道 MOSFET IPB50R199CPATMA1, 17 A, Vds=550 V, 3引脚 D2PAK TO-263封装

得捷:
MOSFET N-CH 550V 17A TO263-3

e络盟:
INFINEON  IPB50R199CPATMA1  晶体管, MOSFET, N沟道, 17 A, 550 V, 0.18 ohm, 10 V, 3 V

艾睿:
In addition to amplifying electronic signals, you&s;ll be able to switch between various lines with the IPB50R199CPATMA1 power MOSFET, developed by Infineon Technologies. Its maximum power dissipation is 139000 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This device utilizes coolmos technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.

安富利:
Trans MOSFET N-CH 550V 17A 3-Pin TO-263 T/R

TME:
Transistor: N-MOSFET; unipolar; 500V; 17A; 139W; PG-TO263-3

Verical:
Trans MOSFET N-CH 550V 17A 3-Pin2+Tab D2PAK T/R