Trans GP BJT NPN 120V 1A 3Pin TO-39
FEATURES: ? NPN POWER AMPLIFIER SILICON TRANSISTOR ? Qualified per MIL-PRF-19500/580
贸泽:
Bipolar Transistors - BJT Power BJT
艾睿:
Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN JANTX2N5682 GP BJT from Microsemi. This bipolar junction transistor&s;s maximum emitter base voltage is 4 V. Its maximum power dissipation is 1000 mW. It has a maximum collector emitter voltage of 120 V and a maximum emitter base voltage of 4 V. This bipolar junction transistor has an operating temperature range of -65 °C to 200 °C.
型号 | 品牌 | 下载 |
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JANTX2N5682 | Microsemi 美高森美 | 下载 |
JANTX2N2905A | Microsemi 美高森美 | 下载 |
JANTX2N2907AUA | Microsemi 美高森美 | 下载 |
JANTX2N2920 | Microsemi 美高森美 | 下载 |
JANTX1N5305-1 | Microsemi 美高森美 | 下载 |
JANTX2N3019 | Microsemi 美高森美 | 下载 |
JANTX1N5310-1 | Microsemi 美高森美 | 下载 |
JANTX2N3019S | Microsemi 美高森美 | 下载 |
JANTX1N5314-1 | Microsemi 美高森美 | 下载 |
JANTX1N5312UR-1 | Microsemi 美高森美 | 下载 |
JANTX1N5314UR-1 | Microsemi 美高森美 | 下载 |