STGP19NC60KD 系列 N沟道 600 V 22 A 超快 PowerMESH IGBT - TO-220
Use the IGBT transistor from STMicroelectronics as an electronic switch. Its maximum power dissipation is 125000 mW. It has a maximum collector emitter voltage of 600 V. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.
型号 | 品牌 | 下载 |
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STGP19NC60KD | ST Microelectronics 意法半导体 | 下载 |
STGP10NC60HD | ST Microelectronics 意法半导体 | 下载 |
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STGP30NC60W | ST Microelectronics 意法半导体 | 下载 |
STGP7NC60H | ST Microelectronics 意法半导体 | 下载 |
STGP30H65F | ST Microelectronics 意法半导体 | 下载 |
STGP35HF60W | ST Microelectronics 意法半导体 | 下载 |
STGP30H60DF | ST Microelectronics 意法半导体 | 下载 |
STGP35N35LZ | ST Microelectronics 意法半导体 | 下载 |
STGP19NC60HD | ST Microelectronics 意法半导体 | 下载 |
STGP40V60F | ST Microelectronics 意法半导体 | 下载 |