IPB60R125C6ATMA1

N沟道 600V 30A

表面贴装型 N 通道 600 V 30A（Tc） 219W（Tc） PG-TO263-3

得捷:
MOSFET N-CH 600V 30A D2PAK

立创商城:
N沟道 600V 30A

贸泽:
MOSFET HIGH POWER_LEGACY

艾睿:
Make an effective common gate amplifier using this IPB60R125C6ATMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 219000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes coolmos technology. This N channel MOSFET transistor operates in enhancement mode.

安富利:
Trans MOSFET N-CH 600V 30A 4-Pin TO-263 T/R

TME:
Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO263-3

Verical:
Trans MOSFET N-CH 600V 30A 3-Pin2+Tab D2PAK T/R