CY62148E 系列 4-Mb 512 K x 8 4.5 - 5.5 V 55 ns 静态 RAM-SOIC-32
SRAM - Asynchronous Memory IC 4Mb 512K x 8 Parallel 55ns 32-SOIC
立创商城:
CY62148ELL-55SXIT
得捷:
IC SRAM 4MBIT PARALLEL 32SOIC
e络盟:
SRAM, 4 Mbit, 512K x 8位, 4.5V 至 5.5V, SOIC, 32 引脚, 55 ns
艾睿:
SRAM Chip Async Single 5V 4M-bit 512K x 8 55ns 32-Pin SOIC T/R
安富利:
The CY62148E is a high performance CMOS static RAM organized as 512 K words by 8-bits. This device features advanced circuit design to provide ultra low standby current. This is ideal for providing More Battery Life™ MoBL® in portable applications. The device also has an automatic power-down feature that significantly reduces power consumption when addresses are not toggling. Placing the device into standby mode reduces power consumption by more than 99% when deselected HIGH. The eight input and output pins I/O0 through I/O7 are placed in a high impedance state when the device is deselected HIGH, Outputs are disabled OE HIGH, or during an active Write operation LOW and WE LOW.
富昌:
CY62148E 系列 4 Mb 512 K x 8 5.5 - 5.5 V 55 ns 静态 RAM-SOIC-32
Chip1Stop:
SRAM Chip Async Single 5V 4M-Bit 512K x 8 55ns 32-Pin SOIC T/R
Verical:
SRAM Chip Async Single 5V 4M-bit 512K x 8 55ns 32-Pin SOIC T/R
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