Trans GP BJT NPN 60V 0.03A 6Pin TO-78
Implement this versatile NPN GP BJT from into an electronic circuit to be used as a current or voltage-controlled switch or amplifier. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 350 mW. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -65 °C to 200 °C.
| 型号 | 品牌 | 下载 |
|---|---|---|
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| JANTX1N5312UR-1 | Microsemi 美高森美 | 下载 |
| JANTX1N5314UR-1 | Microsemi 美高森美 | 下载 |