Trans GP BJT PNP 60V 0.75A 3Pin TO-92-18R
Compared to other transistors, the PNP general purpose bipolar junction transistor, developed by , can offer a high-voltage solution in your circuit. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 625 mW. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V.
| 型号 | 品牌 | 下载 |
|---|---|---|
| 2N5823 TIN/LEAD | Central Semiconductor | 下载 |
| 2N5883G | ON Semiconductor 安森美 | 下载 |
| 2N5886G | ON Semiconductor 安森美 | 下载 |
| 2N5885G | ON Semiconductor 安森美 | 下载 |
| 2N5884G | ON Semiconductor 安森美 | 下载 |
| 2N5876 | Microsemi 美高森美 | 下载 |
| 2N5875 | Microsemi 美高森美 | 下载 |
| 2N5883 | ON Semiconductor 安森美 | 下载 |
| 2N5882 | ON Semiconductor 安森美 | 下载 |
| 2N5830 | Fairchild 飞兆/仙童 | 下载 |
| 2N5878 | Central Semiconductor | 下载 |