STGB35N35LZ-1

STGB35N35LZ-1概述

IGBT 晶体管 345V INTERNALLY CLAMPED IGBT

IGBT - 345 V 40 A 176 W 通孔 I2PAK(TO-262)


得捷:
IGBT 345V 40A 176W I2PAK


贸泽:
IGBT 晶体管 345V INTERNALLY CLAMPED IGBT


艾睿:
Minimize the current at your gate with the STGB35N35LZ-1 IGBT transistor from STMicroelectronics. It has a maximum collector emitter voltage of 380 V. Its maximum power dissipation is 176000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This IGBT transistor has an operating temperature range of -55 °C to 175 °C. It is made in a single configuration.


Chip1Stop:
Trans IGBT Chip N-CH 380V 40A 3-Pin3+Tab I2PAK Tube


DeviceMart:
IGBT CLAMPED 40A 176W I2PAK


Win Source:
IGBT 345V 40A 176W I2PAK


STGB35N35LZ-1数据文档
型号 品牌 下载
STGB35N35LZ-1

ST Microelectronics 意法半导体

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STGB10NB40LZT4

ST Microelectronics 意法半导体

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STGB10NC60KT4

ST Microelectronics 意法半导体

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STGB19NC60KT4

ST Microelectronics 意法半导体

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STGB30NC60WT4

ST Microelectronics 意法半导体

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STGB30NC60KT4

ST Microelectronics 意法半导体

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STGB20NB41LZT4

ST Microelectronics 意法半导体

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STGB40V60F

ST Microelectronics 意法半导体

下载
STGB19NC60WT4

ST Microelectronics 意法半导体

下载
STGB20V60DF

ST Microelectronics 意法半导体

下载
STGB20NB37LZT4

ST Microelectronics 意法半导体

下载

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