DCP56-13

双极晶体管 - 双极结型晶体管BJT 1W 80V

Bipolar BJT Transistor NPN 80V 1A 200MHz 1W Surface Mount SOT-223

立创商城:
NPN 80V 1A

得捷:
TRANS NPN 80V 1A SOT223-3

贸泽:
双极晶体管 - 双极结型晶体管BJT 1W 80V

艾睿:
Implement this versatile NPN DCP56-13 GP BJT from Diodes Zetex into an electronic circuit to be used as a current or voltage-controlled switch or amplifier. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 1000 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.

安富利:
Trans GP BJT NPN 80V 1A 4-Pin3+Tab SOT-223 T/R

Chip1Stop:
Trans GP BJT NPN 80V 1A 4-Pin3+Tab SOT-223 T/R

Verical:
Trans GP BJT NPN 80V 1A 1000mW 4-Pin3+Tab SOT-223 T/R

DeviceMart:
TRANS NPN BIPO 80V SOT-223

Win Source:
TRANS NPN 80V 1A SOT-223