LET9045F

STMICROELECTRONICS  LET9045F  晶体管, 射频FET, 80 V, 9 A, 108 W, 1 GHz, M250

射频 MOSFET ，STMicroelectronics

射频晶体管为 LDMOS，适用于范围为 1 MHz 至 2 GHz 应用中的 L 频段卫星上行链路和 DMOS 功率晶体管。

欧时:
### 射频 MOSFET 晶体管，STMicroelectronics射频晶体管为 LDMOS，适用于范围为 1 MHz 至 2 GHz 应用中的 L 频段卫星上行链路和 DMOS 功率晶体管。### MOSFET 晶体管，STMicroelectronics

得捷:
FET RF LDMOS 80V 9A M-250

贸泽:
射频金属氧化物半导体场效应RF MOSFET晶体管 RF N-CH LdmoST 45W 18.5dB 960MHz

e络盟:
晶体管, 射频FET, 80 V, 9 A, 108 W, 1 GHz, M250

艾睿:
If you&s;re looking for a MOSFET that is compatible with radio frequency environments, this LET9045F RF amplifier from STMicroelectronics is for you! Its maximum power dissipation is 108000 mW. This RF power MOSFET has a minimum operating temperature of -65 °C and a maximum of 200 °C. Its maximum frequency is 1000 MHz. This N channel RF power MOSFET operates in enhancement mode.

安富利:
Trans MOSFET N-CH 80V 9A 3-Pin Case M-250

富昌:
LET9045F 系列 960 MHz 108 W 80 V N 沟道 RF 功率晶体管 MOSFET - M-250

Chip1Stop:
Trans RF MOSFET N-CH 80V 9A 3-Pin Case M-250

Verical:
Trans RF MOSFET N-CH 80V 9A 3-Pin Case M-250 Loose

Win Source:
FET RF LDMOS 80V 9A M-250

DeviceMart:
FET RF LDMOS 80V 9A M-250