IPB60R099CPATMA1

INFINEON  IPB60R099CPATMA1  功率场效应管, MOSFET, N沟道, 31 A, 650 V, 0.09 ohm, 10 V, 3 V

CoolMOS™CP 功率 MOSFET

得捷:
MOSFET N-CH 600V 31A TO263-3

立创商城:
N沟道 600V 31A

欧时:
Infineon CoolMOS CP 系列 Si N沟道 MOSFET IPB60R099CPATMA1, 31 A, Vds=650 V, 3引脚 D2PAK TO-263封装

e络盟:
功率场效应管, MOSFET, N沟道, 650 V, 31 A, 0.09 ohm, TO-263 D2PAK, 表面安装

艾睿:
Thanks to Infineon Technologies, both your amplification and switching needs can be taken care of with one component: the IPB60R099CPATMA1 power MOSFET. Its maximum power dissipation is 255000 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes coolmos technology. This N channel MOSFET transistor operates in enhancement mode.

TME:
Transistor: N-MOSFET; unipolar; 600V; 31A; 255W; PG-TO263-3-2

Verical:
Trans MOSFET N-CH 650V 31A Automotive 3-Pin2+Tab D2PAK T/R

Newark:
# INFINEON  IPB60R099CPATMA1  Power MOSFET, N Channel, 31 A, 650 V, 0.09 ohm, 10 V, 3 V