R1LV0408DSA-5SI#B0

RENESAS  R1LV0408DSA-5SI#B0  芯片, 存储器, SRAM, 4Mb, 3V, 55NS, 32STSOP

The is a 4MB Static Random Access Memory SRAM organized 512-kword x 8-bit, fabricated by Renesass high performance 0.15µm CMOS and TFT technologies. R1LV0408D Series has realized higher density, higher performance and low power consumption. The R1LV0408D Series offers low power standby power dissipation, therefore it is suitable for battery backup systems. It also features single 3V supply of 2.7 to 3.6V.

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Access time - 55ns maximum

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Power dissipation- 3µW standby typical

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Equal access and cycle times

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Common data input and output - 3-state output

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Directly TTL compatible - all inputs and outputs

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Battery backup operation