SUD50P04-08-GE3数据手册PDF_SUD50P04-08-GE3中文资料-锐单商城

SUD50P04-08-GE3概述

VISHAY SUD50P04-08-GE3 晶体管, MOSFET, P沟道, -50 A, -40 V, 6.7 mohm, -10 V, -1 V

The from Vishay is a surface mount, 40V P channel TrenchFET power MOSFET in TO-252 package. This device is used as power switch, DC to DC converters and load switch in high current applications.

.: Drain to source voltage Vds of -40V

.: Gate to source voltage of ±20V

.: Continuous drain current Id of -50A

.: Power dissipation Pd of 73.5W

.: Low on state resistance of 9.7mohm at Vgs -4.5V

.: Operating junction temperature range from -55°C to 150°C

SUD50P04-08-GE3详细参数

SUD50P04-08-GE3数据文档

型号	品牌	下载
SUD50P04-08-GE3	Vishay Semiconductor 威世	下载
SUD50N03-12P-GE3	Vishay Semiconductor 威世	下载
SUD50N04-8M8P-4GE3	Vishay Semiconductor 威世	下载
SUD50N03-06AP-E3	Vishay Semiconductor 威世	下载
SUD50N03-09P-E3	Vishay Semiconductor 威世	下载
SUD50P06-15-GE3	Vishay Semiconductor 威世	下载
SUD50P06-15L-E3	Vishay Semiconductor 威世	下载
SUD50P10-43L-E3	Vishay Semiconductor 威世	下载
SUD50P08-25L-E3	Vishay Semiconductor 威世	下载
SUD50N06-09L-E3	Vishay Semiconductor 威世	下载
SUD50N02-06P-E3	Vishay Semiconductor 威世	下载