ON SEMICONDUCTOR BUL45D2G 射频双极性晶体管
Jump-start your electronic circuit design with this versatile NPN GP BJT from . This bipolar junction transistor"s maximum emitter base voltage is 12 V. Its maximum power dissipation is 75000 mW. This product comes in rail packaging to keep individual parts separated and protected. It has a maximum collector emitter voltage of 400 V and a maximum emitter base voltage of 12 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.
| 型号 | 品牌 | 下载 |
|---|---|---|
| BUL45D2G | ON Semiconductor 安森美 | 下载 |
| BUL416T | ST Microelectronics 意法半导体 | 下载 |
| BUL45G | ON Semiconductor 安森美 | 下载 |
| BUL45 | ON Semiconductor 安森美 | 下载 |
| BUL44 | ON Semiconductor 安森美 | 下载 |
| BUL45D2 | ON Semiconductor 安森美 | 下载 |
| BUL49DFP | ST Microelectronics 意法半导体 | 下载 |
| BUL42D | ON Semiconductor 安森美 | 下载 |
| BUL44F | ON Semiconductor 安森美 | 下载 |
| BUL44D2 | ON Semiconductor 安森美 | 下载 |
| BUL49D | ST Microelectronics 意法半导体 | 下载 |