IXFN340N07

IXFN340N07概述

SOT-227B N-CH 70V 340A

N-Channel 70V 340A Tc 700W Tc Chassis Mount SOT-227B


得捷:
MOSFET N-CH 70V 340A SOT-227B


艾睿:
Compared to traditional transistors, IXFN340N07 power MOSFETs, developed by Ixys Corporation, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 700000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes hiperfet technology.


富昌:
IXFN 系列 单 N 沟道 70 Vds 4 mOhm 700 W 功率 Mosfet - SOT-227B


TME:
Module; single transistor; Uds:70V; Id:100A; SOT227B; 700W; screw


Verical:
Trans MOSFET N-CH Si 70V 340A 4-Pin SOT-227B


Win Source:
MOSFET N-CH 70V 340A SOT-227B / N-Channel 70 V 340A Tc 700W Tc Chassis Mount SOT-227B


IXFN340N07数据文档
型号 品牌 下载
IXFN340N07

IXYS Semiconductor

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IXFN100N10S2

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IXFN100N10S3

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IXFN48N55

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IXFN150N15

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IXFN48N50U3

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IXFN48N50U2

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IXFN150N10

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IXFN44N50U3

IXYS Semiconductor

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IXFN44N50U2

IXYS Semiconductor

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IXFN200N07

IXYS Semiconductor

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