PTFA211801EV5R0XTMA1

High Power RF LDMOS FET, 180W, 28V, 2110 – 2170MHz

Summary of Features:

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Broadband internal matching

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Typical two-carrier WCDMA performance at 2140 MHz, 28 V

\- Average output power = 45.5 dBm

\- Linear Gain = 15.5 dB

\- Efficiency = 27.5%

\- Intermodulation distortion = –36 dBc

\- Adjacent channel power = –41 dBc

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Typical CW performance, 2170 MHz, 30 V

\- Output power at P1dB = 180 W

\- Efficiency = 52%

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Integrated ESD protection

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Excellent thermal stability, low HCI drift

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Capable of handling 10:1 VSWR @ 28 V, 150 W CW output power

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Pb-free and RoHS-compliant

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Package: H-36260-2, bolt-down