Trans GP BJT NPN 50V 0.8A 3Pin UB
Thanks to , your circuit can handle high levels of voltage using the NPN general purpose bipolar junction transistor. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 500 mW. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C.
| 型号 | 品牌 | 下载 |
|---|---|---|
| JAN2N2222AUB | Microsemi 美高森美 | 下载 |
| JAN2N3019 | Microsemi 美高森美 | 下载 |
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| JAN2N2222A | ON Semiconductor 安森美 | 下载 |
| JAN2N2907A | Microsemi 美高森美 | 下载 |
| JAN2N2904A | Microsemi 美高森美 | 下载 |
| JAN2N2219A | Microsemi 美高森美 | 下载 |
| JAN2N3501 | Microsemi 美高森美 | 下载 |
| JAN2N3700 | Microsemi 美高森美 | 下载 |
| JAN2N2905A | ON Semiconductor 安森美 | 下载 |
| JAN2N2906A | Microsemi 美高森美 | 下载 |