STGP30H65F 系列 650 V 30 A 沟槽栅场截止 IGBT - TO-220-3
The IGBT transistor from STMicroelectronics is perfect to use as an electronic switch eliminating the current at the gate. It has a maximum collector emitter voltage of 650 V. Its maximum power dissipation is 260000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device is made with trench technology. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. It is made in a single configuration.
| 型号 | 品牌 | 下载 |
|---|---|---|
| STGP30H65F | ST Microelectronics 意法半导体 | 下载 |
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