Trans MOSFET N-CH 800V 8A 3Pin3+Tab TO-220F Tube
General Description
These N-Channel enhancement mode power field effect transistors are produced using ’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.
Features
• 8A, 800V, RDSon= 1.55Ω@VGS= 10 V
• Low gate charge typical 35 nC
• Low Crss typical 13 pF
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS Compliant
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