STAC2932BW

STAC2932BW概述

HF / VHF / UHF射频功率N沟道MOSFET HF/VHF/UHF RF power N-channel MOSFETs

Ideal for radio frequency environments this RF amplifier from STMicroelectronics is perfect for amplifying and switching electronic signals. Its maximum power dissipation is 625000 mW. The component will be shipped in tray format. This N channel RF power MOSFET operates in enhancement mode. This RF power MOSFET has an operating temperature range of -65 °C to 200 °C. Its maximum frequency is 250 MHz.

STAC2932BW数据文档
型号 品牌 下载
STAC2932BW

ST Microelectronics 意法半导体

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STAC4932F

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STAC2932FW

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ST Microelectronics 意法半导体

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STAC2942FW

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STAC2942BW

ST Microelectronics 意法半导体

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STAC2933

ST Microelectronics 意法半导体

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