PHT6NQ10T

NXP  PHT6NQ10T  晶体管, MOSFET, N沟道, 3 A, 100 V, 90 mohm, 10 V, 3 V

The is a 100V standard level N-channel Enhancement Mode Field Effect Transistor uses TrenchMOS technology. Low conduction losses due to low on-state resistance and higher operating power due to low thermal resistance. Suitable for use in DC to DC converters, motor and relay drivers applications.

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150°C Junction temperature

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Suitable for high frequency applications due to fast switching characteristics