TMS28F400BZT

262 144 x 16 位和 524 288 x 8 位引导块闪存

The TMS28F400BZx is a 524288 by 8-bit/262144 by 16-bit 4194304-bit, boot-block flash memory that can be electrically block-erased and reprogrammed. The TMS28F400BZx is organized in a blocked architecture consisting of one 16K-byte protected boot block, two 8K-byte parameter blocks, one 96K-byte main block, and three 128K-byte main blocks. The device can be ordered with either a top or bottom boot-block configuration. Operation as a 512K-byte 8-bit or a 256K-word 16-bit organization is user-definable.

Embedded program and block-erase functions are fully automated by an on-chip write state machine WSM, simplifying these operations and relieving the system microcontroller of these secondary tasks. WSM status can be monitored by the on-chip status register to determine progress of program/erase tasks. The device features user-selectable block erasure.

The TMS28F400BZx flash memory is offered in a 44-pin PSOP. It is available in two temperature ranges:

0°C to 70°C and - 40°C to 85°C.

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Organization... 524288 by 8 Bits

262144 by 16 Bits

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Array-Blocking Architecture

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Two 8K-Byte Parameter Blocks

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One 96K-Byte Main Block

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Three 128K-Byte Main Blocks

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One 16K-Byte Protected Boot Block

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Top or Bottom Boot Locations

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All Inputs/Outputs TTL Compatible

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Maximum Access/Minimum Cycle Time

VCC ± 10%

"28F400BZx80 80 ns

"28F400BZx90 90 ns

x = top T or bottom B boot-block configuration ordered

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10000 Program/Erase-Cycles

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Two Temperature Ranges

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Commercial...0°C to 70°C

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Extended...- 40°C to 85°C

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Low Power Dissipation VCC = 5.5 V

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Active Write...330 mW Byte Write

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Active Read...330 mW Byte Read

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Active Write...358 mW Word Write

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Active Read...330 mW Word Read

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Block Erase...165 mW

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Standby...0.55 mW CMOS-Input Levels

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Deep Power-Down Mode...0.0066 mW

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Fully Automated On-Chip Erase and Word/Byte-Program Operations

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Write Protection for Boot Block

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Industry Standard Command State Machine CSM

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Erase Suspend/Resume

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Algorithm-Selection Identifier