IPD65R225C7ATMA1

INFINEON  IPD65R225C7ATMA1  功率场效应管, MOSFET, N沟道, 11 A, 650 V, 0.199 ohm, 10 V, 3.5 V

The IPD65R225C7 is a 650V CoolMOS™ C7 N-channel Power MOSFET features lower gate charge. The CoolMOS™ is a revolutionary technology for high voltage power MOSFET, designed according to the super-junctionSJ principle and pioneered by Technologies. The CoolMOS™ C7 combines the experience of the leading SJ MOSFET supplier with high class innovation. The product portfolio provides all benefits of fast switching super-junction MOSFET offering better efficiency, reduced gate charge, easy implementation and outstanding reliability.

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Increased dV/dt ruggedness

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Better efficiency due to best in class FOM RDS ON x Eoss and RDS ON x Qg

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Best in class RDS ON

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Easy to use/drive

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Halogen-free

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Enabling higher system efficiency

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Enabling higher frequency

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Increased power density solutions

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Size savings due to reduced cooling requirements

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Higher system reliability due to lower operating temperatures

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Reduced energy stored in output capacitanceEoss

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Low switching losses

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Outstanding CoolMOS™ quality

For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended.