DE275-501N16A

IXYS RF  DE275-501N16A  晶体管, 射频FET, 500 V, 16 A, 590 W, 100 MHz, DE-275

The is a 500V N-channel Enhancement Mode RF Power MOSFET with low RDS on ideal for Class C, D and E applications. This MOSFET can also be used in laser driver, induction heating, switch mode power supplies and switching industrial applications.

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High isolation voltage

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Excellent thermal transfer

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Increased temperature and power cycling capability

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IXYS advanced low Qg process

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Low gate charge and capacitances offer easier to drive and faster switching

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Very low insertion inductance

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No beryllium oxide BeO or other hazardous materials

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Easy to mount, no insulators needed

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High power density