IPZ60R099P6FKSA1

N沟道 600V 37.9A

* Increased MOSFET dv/dt ruggedness * Extremely low losses due to very low FOM Rdson Qg and Eoss * Very high commutation ruggedness * Best in class RDSon /package * Easy to use/drive due to driver source pin for better control of the gate * Pb-free plating, Halogen free mold compound * Qualified for industrial grade applications according to JEDEC J-STD20 and JESD22 * 4-pin kelvin source concept

立创商城:
N沟道 600V 37.9A

得捷:
MOSFET N-CH 600V 37.9A TO247-4

贸泽:
MOSFET HIGH POWER_PRICE/PERFORM

艾睿:
Trans MOSFET N-CH 600V 37.9A 4-Pin4+Tab TO-247 Tube

安富利:
CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction SJ principle and pioneered by Infineon Technologies. CoolMOS™ P6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter and cooler.