128K words x 16Bits x 2 banks4Mbitsynchronous graphics RAM
DESCRIPTION
ISSI"s 4Mb Synchronous DRAM IS42S16128 is organized as a 131072-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.
FEATURES
• Clock frequency: 125 MHz, 100 MHz, 83 MHz
• Two banks can be operated simultaneously and independently
• Single 3.3V power supply
• LVTTL interface
• Programmable burst length – 1, 2, 4, 8, full page
• Programmable burst sequence: Sequential/Interleave
• Auto refresh, self refresh
• 1K refresh cycles every 16 ms
• Random column address every clock cycle
• Programmable CAS latency 2, 3 clocks
• Burst read/write and burst read/single write operations capability
• Byte controlled by LDQM and UDQM
• Package 400-mil 50-pin TSOP II
型号 | 品牌 | 下载 |
---|---|---|
IS42S16128-8T | Integrated Silicon SolutionISSI | 下载 |
IS42S16400F-7TLI-TR | Integrated Silicon SolutionISSI | 下载 |
IS42S16100H-7TLI-TR | Integrated Silicon SolutionISSI | 下载 |
IS42S16100H-6TLI-TR | Integrated Silicon SolutionISSI | 下载 |
IS42S16100E-6TLI-TR | Integrated Silicon SolutionISSI | 下载 |
IS42S16100H-6BL-TR | Integrated Silicon SolutionISSI | 下载 |
IS42VM16400M-75BLI-TR | Integrated Silicon SolutionISSI | 下载 |
IS42S16100H-6TL-TR | Integrated Silicon SolutionISSI | 下载 |
IS42VM16800H-75BLI-TR | Integrated Silicon SolutionISSI | 下载 |
IS42SM32400H-75BLI-TR | Integrated Silicon SolutionISSI | 下载 |
IS42VM32400H-75BLI-TR | Integrated Silicon SolutionISSI | 下载 |