射频MOSFET功率晶体管， lOOW ， 28V 100 - 500兆赫 RF MOSFET Power Transistor, lOOW, 28V 100 - 500 MHz
RF Power MOSFET Transistor
100W, 100-500 MHz, 28V
Features
• N-channel enhancement mode device
• DMOS structure
• Lower capacitances for broadband operation
• High saturated output power
• Lower noise figure than competitive devices
• RoHS Compliant
贸泽:
RF MOSFET Transistors
Verical:
Trans RF MOSFET N-CH 65V 12A 5-Pin