VS-FB180SA10P

VISHAY  VS-FB180SA10P  单晶体管 双极, N沟道, 180 A, 100 V, 6.5 mohm, 10 V

The is a 5th generation high current density N channel Power MOSFET is paralleled into a compact, high power module providing the best combination of switching, ruggedized design, very low on-resistance and cost effectiveness.

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Easy to use and parallel

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Dynamic dv/dt rating

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Fully avalanche rated

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Simple drive requirements

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Low drain to case capacitance

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Low internal inductance