N-Channel Enhancement Mode Field Effect Transistor
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
30V, 100A, RDSON = 5.3mΩ @VGS = 10V.
RDSON = 8.0mΩ @VGS = 4.5V.
Super high dense cell design for extremely low RDSON.
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 package.
Win Source:
N-Channel Enhancement Mode Field Effect Transistor