N沟道MOSFET PowerTrench® N-Channel PowerTrench® MOSFET
General Description
The has been designed to minimize losses in conversion application. Advancements in both silicon rDSon while maintaining excellent switching performance. power and package technologies have been combined to offer the lowest
Features
Max rDSon= 9.5 m:at VGS= 10 V,ID= 13.5 A
Max rDSon= 14.5 m:at VGS= 4.5 V, ID= 10.9 A
Advanced Package and Silicon combination for low rDSon and high efficiency
MSL1 robust package design
RoHS Compliant
| 型号 | 品牌 | 下载 |
|---|---|---|
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| FDMS8023S | Fairchild 飞兆/仙童 | 下载 |
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