JAN2N6301

Trans Darlington NPN 80V 8A 75000mW 3Pin2+Tab TO-66

This high speed NPN transistor is rated at 8 amps and is military qualified up to a JANTXV level.  This TO-213AA isolated package features a 180 degree lead orientation.

艾睿:
Microsemi brings you their latest NPN JAN2N6301 Darlington transistor, a component that can easily provide you with much higher current gain values. This Darlington transistor array&s;s maximum emitter base voltage is 5 V, while its maximum base emitter saturation voltage is 4@80mA@8A V. This product&s;s maximum continuous DC collector current is 8 A, while its minimum DC current gain is 500@1A@3 V|750@4A@3V|100@8A@3V. It has a maximum collector emitter saturation voltage of 2@16mA@4A|3@80mA@8A V. Its maximum power dissipation is 75000 mW. This Darlington transistor array has an operating temperature range of -55 °C to 200 °C. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 5 V.

Verical:
Trans Darlington NPN 80V 8A 75000mW 3-Pin2+Tab TO-66 Tray