MMBT2222ALT3G

ON SEMICONDUCTOR  MMBT2222ALT3G  双极性晶体管, NPN, 40V SOT-23, 整卷

通用 NPN ，最大 1A，On Semiconductor

### 标准

带 S 或 NSV 前缀的制造商部件号具有汽车资格，符合 AEC-Q101 标准。

欧时:
ON Semiconductor MMBT2222ALT3G , NPN 晶体管, 600 mA, Vce=40 V, HFE:40, 100 MHz, 3引脚 SOT-23封装

立创商城:
MMBT2222ALT3G

得捷:
TRANS NPN 40V 0.6A SOT23-3

贸泽:
双极晶体管 - 双极结型晶体管BJT SS SOT23 GP XSTR NPN 30V

e络盟:
单晶体管 双极, NPN, 40 V, 300 MHz, 225 mW, 600 mA, 40 hFE

艾睿:
Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN MMBT2222ALT3G GP BJT from ON Semiconductor. This bipolar junction transistor&s;s maximum emitter base voltage is 6 V. Its maximum power dissipation is 300 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 6 V.

Allied Electronics:
Transistor NPN 40V 600mA SOT23

安富利:
Trans GP BJT NPN 40V 0.6A 3-Pin SOT-23 T/R

Chip1Stop:
Trans GP BJT NPN 40V 0.6A 300mW Automotive 3-Pin SOT-23 T/R

Verical:
Trans GP BJT NPN 40V 0.6A Automotive 3-Pin SOT-23 T/R

Newark:
# ON SEMICONDUCTOR  MMBT2222ALT3G  Bipolar BJT Single Transistor, General Purpose, NPN, 40 V, 300 MHz, 225 mW, 600 mA, 100 hFE

Win Source:
TRANS NPN 40V 0.6A SOT-23

DeviceMart:
TRANS NPN GP 40V 600MA SOT-23