SISA18ADN-T1-GE3数据手册PDF_SISA18ADN-T1-GE3中文资料-锐单商城

SISA18ADN-T1-GE3概述

VISHAY SISA18ADN-T1-GE3 晶体管, MOSFET, N沟道, 38.3 A, 30 V, 0.006 ohm, 10 V, 1.2 V

The is a 30VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for DC-to-DC power supply, high current power rails in computing, battery protection, telecom POL and brick applications.

.: 100% Rg tested

.: 100% UIS tested

.: Halogen-free

.: -55 to 150°C Operating temperature range

SISA18ADN-T1-GE3详细参数

SISA18ADN-T1-GE3数据文档

型号	品牌	下载
SISA18ADN-T1-GE3	Vishay Semiconductor 威世	下载
SISA16DN-T1-GE3	Vishay Semiconductor 威世	下载
SISA12ADN-T1-GE3	Vishay Semiconductor 威世	下载
SISA10DN-T1-GE3	Vishay Semiconductor 威世	下载
SISA04DN-T1-GE3	Vishay Semiconductor 威世	下载
SISA14DN-T1-GE3	Vishay Semiconductor 威世	下载
SISA12DN-T1-GE3	Vishay Semiconductor 威世	下载