DUAL NPN MEDIUM POWER HIGH GAIN TRANSISTORS
Summary
BVCEO > 17.5V ICcont = 5A VCEsat < 75mV @ 1A PD = 2.75W
Description
Advanced process capability has been used to achieve this high performance device. Combining two NPN transistors in the SM-8 package provides a compact solution for the intended applications.
Features
• Dual NPN device
• Very low saturation voltage
• High gain
• SM 8 package
Applications
• CCFL invertors
• Royer circuits