射频线控制的“ Q”宽带功率晶体管125W ， 30到500MHz ， 28V The RF Line Controlled “Q” Broadband Power Transistor 125W, 30 to 500MHz, 28V
Designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range.
• Specified 28 V, 400 MHz characteristics —
Output power = 125 W
Typical gain = 10 dB
Efficiency = 55% typ.
• Built–in input impedance matching networks for broadband operation
• Push–pull configuration reduces even numbered harmonics
• Gold metallization system for high reliability
• 100% tested for load mismatch
得捷:
RF TRANS 2NPN EMITTR 30V 744A-01
Chip1Stop:
Trans GP BJT NPN 30V 16A 8-Pin Case 744A-01
Verical:
Trans RF BJT NPN 30V 16A 8-Pin Case 744A-01