FDS6961A

FAIRCHILD SEMICONDUCTOR  FDS6961A..  双路场效应管, MOSFET, 双N沟道, 3.5 A, 30 V, 90 mohm, 10 V, 1.8 V

General Description

These N-Channel Logic Level MOSFETs are produced using Semiconductor"s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching

performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Features

3.5 A, 30 V. RDSON = 0.090 W @ VGS = 10 V

                 RDSON = 0.140 W @ VGS = 4.5 V.

Fast switching speed.

Low gate charge 2.1nC typical.

High performance trench technology for extremely low RDSON.

High power and current handling capability.